MOSFET N/P-CH 20V CHIPFET NTHC5513T1G
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Description:
MOSFET N/P-CH 20V CHIPFET
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
DataSheet
NTHC5513T1G(FET, MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory21451,Price reference "real-time change" China/Hongkong。 NTHC5513T1G package/specs, Download NTHC5513T1G、Datasheet。